首页> 外文会议>Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International >Ionized metal plasma deposition of titanium and titanium nitride for deep contact applications
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Ionized metal plasma deposition of titanium and titanium nitride for deep contact applications

机译:钛和氮化钛的离子化金属等离子体沉积,用于深接触应用

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The characteristics of ionized metal plasma PVD Ti-TiN films have been investigated for the application as a liner for small deep contacts. Compared to collimated Ti-TiN films, the bottom coverage of IMP Ti-TiN is more than two times higher at high aspect ratio contacts. With substrate bias, IMP Ti and IMP TiN show different crystallographic orientation behaviour. When applied to deep contacts, excellent contact resistance was achieved with thinner IMP Ti films, which is only one third of the thickness of collimated Ti films. Adopting the IMP TiN liner also represents a lower contact resistance than collimated TiN liners.
机译:已经研究了离子化金属等离子体PVD Ti-TiN膜的特性,将其用作小型深接触的衬里。与准直的Ti-TiN薄膜相比,IMP Ti-TiN的底部覆盖率在高深宽比触点的情况下要高出两倍以上。在衬底偏压下,IMP Ti和IMP TiN表现出不同的晶体取向行为。当应用于深接触时,使用较薄的IMP Ti膜可获得出色的接触电阻,该厚度仅为准直Ti膜厚度的三分之一。采用IMP TiN衬里还比准直的TiN衬里具有更低的接触电阻。

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