Performance of HgCdTe InGaAs and quantum well GaAs/AlGaAs staring infrared focal plane arrays

摘要

Abstract: The ability to hybridize various detector arrays in disparate technologies to an assortment of state-of-the-art silicon readouts has enabled direct comparison of key IR detector technologies including photovoltaic (PV) HgCdTe/Al$-2$/O$-3$/, PV HgCdTe/CdZnTe, PV InGaAs/InP, and the photoconductive (PC) GaAs/AlGaAs quantum well IR photodetector (QWIP). The staring focal plane arrays range in size from 64 $MUL 64 to 1024 $MUL 1024; we compare these IR detector technologies versus operating temperature and background flux via hybrid FPA test at operating temperatures from 32.5 K to room temperature and photon backgrounds from mid-10$+5$/ to $APEQ 10$+17$/ photons/cm$+2$/-s. Several state-of-the-art IR FPAs are included: a 1.7 $mu@m 128 $MUL 128 InGaAs hybrid FPA with room temperature D of 1.5 $MUL 10$+13$/ cm-Hz$+1/2$//W and 195K D of 1.1 $MUL 10$+15$/ cm-Hz$+1/2$//W; a 3.2 $mu@m 1024 $MUL 1024 FPA for surveillance; a 4.6 $mu@m 256 $MUL 256 HgCdTe/Al$-2$/O$-3$/ FPA for imaging with BLIP NE$Delta@T of 2.8 mK at 95K; and a 9 $mu@m 128 $MUL 128 GaAs QWIP with 32.5 K D $GRT 10$+14$/ cm-Hz$+1/2$//W at 32.5K and 8 $MUL 10$+10$/ cm-Hz$+1/2$/W at 62K. !21