首页> 外文会议>Physics and Simulation of Optoelectronic Devices V >Heating of the front and rear facets of GaAlAs/GaAs edge emitting laser diodes
【24h】

Heating of the front and rear facets of GaAlAs/GaAs edge emitting laser diodes

机译:GaAlAs / GaAs边缘发射激光二极管的正面和背面的加热

获取原文

摘要

Abstract: Gradual degradation and catastrophical optical damage (COD) of the facets is one of the main reasons limiting output power and lifetime of diode lasers. The facets undergo a strongly localized intense heating caused by nonradiative surface recombination of carriers. We theoretically and experimentally investigate the temperature rise at the facets of an asymmetrically coated 20-stripe GaAs/GaAlAs laser diode array. We examine the effect of the asymmetric thermal load of the facets and evaluate the role of reabsorption of photons under different conditions. It is suggested that COD occurs at the reflection-coated facet of this device. !28
机译:摘要:刻面的逐渐降解和灾难性滤光件(COD)是限制二极管激光器的输出功率和寿命的主要原因之一。方面经历了由载体的非接种表面重组引起的强烈局部强烈的加热。理论上和实验地研究了不对称涂覆的20条纹GaAs / Gaalas激光二极管阵列的面部的温度升高。我们研究了小平面的不对称热负荷的效果,评价了不同条件下光子的重吸收的作用。建议鳕鱼发生在该装置的反射涂层刻面处。 !28

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号