Electronic properties and device applications of hot-wire CVD polycrystalline silicon films

摘要

Polycrystaline silicon films (5 to 30 um m thick) have been deposited on glass substrates at low temperatures (400-550 deg C) with a rate of 15 A/s by hot-wire chemical vapour deposition (HWCVD).The homogeneity of the deposited layer is +-5