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Microcrystalline silicon germanium: an attractive bottom-cell material for thin-film silicon-based tandem-solar-cells

机译:微晶硅锗:一种有吸引力的底部电池材料,用于薄膜硅基串联太阳能电池

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We have prepared hydrogenated microcrystalline silicon germanium by plasma enhanced CVD of a mixture of silane and germane gas diluted with hydrogen.The growth conditions have been systematically controlled to obtain large (approx 400A) crystallites of silicon-germanium as observed using Raman scatterin gand x-ray diffraction.The dangling bond (germanium) density has been reduced to < 5x10~16 cm~-3 at low substrate temperatures (approx 150 deg C).The optical absorption spectra of the 50
机译:我们通过等离子体增强化学气相沉积法(CVD)对硅烷和锗烷气体的混合物进行了氢稀释,制备了氢化微晶硅锗。通过拉曼散射仪gand-x-x观察到,已经系统地控制了生长条件以获得硅锗的大(约400A)微晶。在较低的基板温度(约150摄氏度)下,悬空键(锗)的密度已降低至<5x10〜16 cm〜-3.50的光吸收光谱

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