We have prepared hydrogenated microcrystalline silicon germanium by plasma enhanced CVD of a mixture of silane and germane gas diluted with hydrogen.The growth conditions have been systematically controlled to obtain large (approx 400A) crystallites of silicon-germanium as observed using Raman scatterin gand x-ray diffraction.The dangling bond (germanium) density has been reduced to < 5x10~16 cm~-3 at low substrate temperatures (approx 150 deg C).The optical absorption spectra of the 50
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