Single wafer amorphous silicon amorphous silicon deposition was characterized through process modeling and film characterization for application in semiconductor production.DOE methodology was used to determine the main depsotion parameters,and the responses were limited to device production requirement properties of surface roughness,deposition rate and degree of crystallinity of the as-deposited film.The data trends and models show that deposition temperature and silane flow are the amin factors.Increasing either or both factor increases the deposition rate and the surface roughness.The surface morphology,evaluated by AFM,SEM and TEM,was found to be rougher at extreme growth condiftions than the poly crystalline film formed after anneal.The as-deposited surafce morphology was not a result of pre-anneal crystal formations as determined by TEM cross sections of samples before and after anneal.Lack of crystalinity is important for impurity diffusion considerations.Device apprlication of the single wafer a-Si process will be a compromise between growth rate (and associated throughput) and surface roughness that can be tolerated.
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