The offset between Si temperature and indicated TC temperature when a thermocouple instrumented wafer is placed in a double side heated RTP system was measured by means of an isothermal cavity, formed by 2 parallel Si wafers mounted in the system. The lamp powers were controlled to get an equal wafer temperature, making the cavity isothermal. Inside the cavity, an R-type TC with a NIST traceable calibration was mounted. Outside the cavity, a standard type K 1530 SensArray thermocouple [1] was exposed to the typical conditions in an RTP system. the offset was measured as the difference between the indicated temperature of the NIST traceable type R TC. The 3 sources of the offset are discussed and a typical correction factor is proposed.
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