Transmission electron microscopy investigations of an epitaxial beryllium-chalcogenide-based superlattice

摘要

Electron microscopy techniques were used to investigate a BeSe containing II/VI-semiconductor superlattice grown by molecular beram epitaxy on a (001)-oriented GaAs substrate. The BeTe/ZnSe-superlattice was examined by scanning electron microscopy, conventional and high-resolution transmission electron microscopy. The superlattice shows cracks preferentially oriented along one particular <110> direction to relax the tensile stress in the superlattice. High-resolution micrographs were evaluated by correspondence analysis (CA) to quantify the abruptness of the chemical transition at the interfaces and to determine accurately the layer thicknesses.