Global plastic relaxation of strained-layer superlattices with non-compensated strains

摘要

We investigate by TEM the plastic relaxation of strained-layer-superlattices (SLSs) with non-compensated strains. Grown without dislocation beyond their critical thickness, the SlSs relax plastically during subsequent rapid thermal annealing. The dislocations appear in pairs located at the interfaces between the SLS and the buffer and the SLS and the capping layer. Their dissociation geometry is investigated. Depositing a silicon oxide mask on the structure prior to annealing strongly reduces the amount of plastic relaxation.