Accelerated lifetime testing and failure analysis of quartz based GaAs planar Schottky diodes

摘要

Accelerated lifetime tests have been performed on integrated planar GaAs Schottky diodes that were bonded to quartz substrates upside-down with a heat-cured epoxy. Results at 175/spl deg/C, 200/spl deg/C, and 240/spl deg/C were analyzed using the Arrhenius-lognormal model. These tests predict a room temperature MTTF of 3/spl times/10/sup 8/ hours, a value that is comparable to conventional high-frequency planar Schottky diodes. This result demonstrates that the use of an appropriate epoxy to obtain GaAs devices on quartz substrates does not significantly reduce the lifetime of the devices.