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Switching transients in class-D RF power amplifiers

机译:D类RF功率放大器中的开关瞬变

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Class-D RF-power amplification offers both high efficiency and increased power output. When used as part of a Kahn-technique transmitter, it also offers excellent linearity. Class-D RF power amplifiers (PAs) for the HF and VHF bands generally use the transformer coupled topology because it is well-suited to the available n-channel RF-power MOSFETs. Output transformers with two or even three decades of bandwidth are readily implemented. Modern l-GHz RF-power MOSFETs makes possible class-D power amplifiers with subnanosecond switching speeds. Changing the drain capacitance through the inductance of the RF-output transformer produces a drain-voltage transient that can necessitate operating the PA at a reduced supply voltage and output power. Driving the MOSFETs with a sine-wave of moderate amplitude increases the switching time and eliminates the transients, allowing the PA to be operated at full power. This paper therefore examines the mechanism for generating switching transients and their control with sine-wave drive.
机译:D类RF功率放大可提供高效率并增加功率输出。当用作卡恩技术变送器的一部分时,它还具有出色的线性度。 HF和VHF频段的D类RF功率放大器(PA)通常使用变压器耦合拓扑,因为它非常适合于可用的n通道RF功率MOSFET。具有两个或什至三十个带宽的输出变压器很容易实现。现代的1 GHz RF功率MOSFET使亚类开关速度的D类功率放大器成为可能。通过RF输出变压器的电感来改变漏极电容会产生漏极电压瞬变,这可能需要在降低的电源电压和输出功率下操作PA。用中等幅度的正弦波驱动MOSFET会增加开关时间并消除瞬变,从而使PA能够以全功率工作。因此,本文研究了产生开关瞬变的机制及其通过正弦波驱动的控制。

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