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Evaluation criteria for e-beam mask writing systems

机译:电子束口罩书写系统的评估标准

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Abstract: Mask makers generally specify Critical Dimension (CD) Uniformity for customer product plates as a composite value. This must include the contributions of machine systematics such as deflection field distortions and stripe butting and external error sources such as resist processing and measurement. This broad definition requires that a line at any location within the quality area must be within spec. Manufacturers of electron beam lithography equipment have traditionally taken a more component-based approach: separating CD Uniformity from other lithography error sources by using a test pattern in which features are written at the center of the writing stripe. This approach removes the effect of field distortion and stripe butting error. These intrastripe and interstripe errors are evaluated in terms of their impact on placement accuracy but not CD control. Another issue that clouds the evaluation of CD Uniformity is the definition of the specification itself. Some in the industry represented CD Uniformity in terms of range while others use a 3$sigma value. Rarely does a specification include the data sample size. Lepton has adopted a new approach to the evaluation of CD Uniformity for EBES4: CD Uniformity is evaluated in terms of both global and local performance. Global CD Uniformity incorporates effects of beam stability, depth of focus and materials effects while Local CD Uniformity addresses the impacts of deflection distortion and stripe butting. This paper focuses on Local CD Uniformity and the contribution of Stripe Butting to that specification. A methodology will be presented which makes use of a test cell containing features not fractured by stripe or cell boundaries (off-boundary) as well as features bisected by these boundaries (on-boundary). The data for a number of plates are analyzed in terms of range and 3$sigma as well as being evaluated as a function of sample size. In addition, traditional butting evaluation techniques such as the placement based, `railroad track' method and the `point by point' CD method are used for purposes of comparison.!4
机译:摘要:口罩制造商通常将客户产品板材的临界尺寸(CD)均匀性指定为复合值。这必须包括机器系统的贡献,例如偏转场变形和条纹对接,以及外部误差源,例如抗蚀剂处理和测量。这个广泛的定义要求质量区域内任何位置的线都必须在规格范围内。电子束光刻设备的制造商传统上采用了一种基于组件的方法:通过使用一种将特征写在写入条带中心的测试图案,将CD均匀性与其他光刻错误源分开。这种方法消除了场失真和条纹对接误差的影响。这些条带内和条带间错误是根据其对放置精度的影响来评估的,而不是对CD控制的影响。困扰CD一致性评估的另一个问题是规范本身的定义。行业中有些人表示CD均匀性,而另一些人表示3sigma值。很少有规范包含数据样本大小。 Lepton采用了一种新的方法来评估EBES4的CD均匀性:CD均匀性是根据全球和本地绩效进行评估的。全局CD均匀性结合了光束稳定性,聚焦深度和材料效果的影响,而局部CD均匀性解决了偏转失真和条纹对接的影响。本文着重于本地CD均匀性以及“条纹对接”对该规范的贡献。将提出一种使用测试单元的方法,该测试单元包含不被条纹或单元边界(边界外)破坏的特征以及被这些边界(边界上)二等分的特征。根据范围和3 $ sigma来分析许多板的数据,并作为样本量的函数进行评估。另外,为了进行比较,还使用了传统的对接评估技术,例如基于位置的,“铁轨”方法和“逐点” CD方法。4

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