Generation of picosecond far-infrared pulses using laser-activated semiconductor reflection switches

摘要

Abstract: A source of high-intensity, picosecond-to-nanosecond far-IR pulses has been developed at the UCSB Center for Free- Electron Laser Studies. The microsecond-long, far-IR output of the UCSB free-electron laser is sliced into shorter pulses using laser-activated semiconductor reflection switches. We have observed pulse durations as short as 20 ps at 22 cm$+$MIN@1$/. An overview of the design and performance of the pulse-slicer system is given. !40