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RELIABLE GENERATION OF PICOSECOND OPTICAL PULSES AND THEIR APPLICATION TOTHE MEASUREMENT OF INTRABAND RELAXATION TIMES IN SEMICONDUCTORS

机译：光电二极管的可靠生成及其在半导体带内弛豫时间的测量中的应用

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Weichel Hugo 1937-;
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年度 1972
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正文语种 en_US
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1. Intensity Autocorrelation Measurement of 400 nm Picosecond Optical Pulses from a GalnN Mode-Locked Semiconductor Laser Diode Using Surface Second Harmonic Generation of ss-BaB_2O_4 Crystal [J] . Shunsuke Kono, Tomoyuki Oki, Masaru Kuramoto, Annales de l'I.H.P . 2010,第12期

机译：使用ss-BaB_2O_4晶体的表面第二谐波产生来自GalnN锁模半导体激光二极管的400 nm皮秒光脉冲的强度自相关测量
2. Rising and falling time of amplified picosecond optical pulses by semiconductor optical amplifiers [J] . Guang-Qiong Xia, Zheng-Mao Wu, Gong-Ru Lin Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter . 2003,第1a3期

机译：半导体光放大器放大的皮秒光脉冲的上升和下降时间
3. Generation and optimum control of picosecond optical pulses from gain-switched semiconductor lasers [J] . Paulus P., Langenhorst R. IEEE Journal of Quantum Electronics . 1988,第8期

机译：增益切换半导体激光器产生皮秒光脉冲并对其进行最佳控制
4. Direct observation of intraband carrier relaxation phenomena in semiconductors with a picosecond free-electron laser [C] . Alec P. Mitchell, Stanford Univ., Stanford, Conference on terahertz spectroscopy and applications . 1999

机译：皮秒自由电子激光直接观察半导体中的带内载流子弛豫现象
5. RELIABLE GENERATION OF PICOSECOND OPTICAL PULSES AND THEIR APPLICATION TOTHE MEASUREMENT OF INTRABAND RELAXATION TIMES IN SEMICONDUCTORS. [D] . WEICHEL, HUGO. 1972

机译：PICCONCOND光学脉冲的可靠生成及其在半导体内带内弛豫时间的测量中的应用。
6. Near-Infrared Optical Modulation for Ultrashort Pulse Generation Employing Indium Monosulfide (InS) Two-Dimensional Semiconductor Nanocrystals [O] . Tao Wang, Jin Wang, Jian Wu, 2019

机译：利用单硫化铟（InS）二维半导体纳米晶体产生超短脉冲的近红外光调制。
7. MEASUREMENT OF ULTRAFAST RELAXATION TIMES IN SEMICONDUCTORS USING PICOSECOND PULSES [O] . Smirl Arthur Lee 1944- 1975

机译：使用皮秒脉冲测量半导体中的超快松弛时间

RELIABLE GENERATION OF PICOSECOND OPTICAL PULSES AND THEIR APPLICATION TOTHE MEASUREMENT OF INTRABAND RELAXATION TIMES IN SEMICONDUCTORS

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