Q-band monolithic rf optical photoreceiver using InP-based PIN-HEMT MBE selective epitaxy

摘要

Abstract: We report an RF optical InP-based PIN-HEMT photoreceiver operating across a measured 36-46 GHz frequency band fabricated on the same wafer using selective area regrowth with molecular beam epitaxy. The photoreceiver design consists of a 20 micron circular InGaAs/InP photodiode integrated with a wide band 0.15 micron gate length InGaAs/InAlAs/InP low noise amplifier optimized for 44 GHz operation. The heterodyne technique of beating the frequency of two lasers was used to generate an RF modulated light signal at 1.3 micron wavelength. The output of the photoreceiver was measured on a spectrum analyzer and was found to be $MIN@24 to $MIN@27 dBm across a 36-46 GHz band. !12