DC bias dependence of metal-insulator-metal diodes as generators of far-infrared radiation

机译：金属-绝缘体-金属二极管作为远红外辐射发生器的直流偏置依赖性

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Abstract: Three kinds of metal-insulator-metal diodes, W-Ni, W-Co, and W-Fe diodes, have been used as mixer-generators of far-IR radiation. The dependencies of the generated far-IR power on the dc bias voltage applied to the didoes have been investigated. Observed bias dependencies can be predicted by analyzing their current-voltage characteristics. !15

机译：摘要：三种金属-绝缘体-金属二极管W-Ni，W-Co和W-Fe二极管已被用作远红外辐射的混合发生器。已经研究了所产生的远红外功率对施加到二极管的直流偏置电压的依赖性。可以通过分析其电流-电压特性来预测观察到的偏置依存关系。！15

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《Millimeter and Submillimeter Waves and Applications III》|1996年|p.594-601|共8页
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Hitoshi Odashima; Toyama Univ.; Boulder; CO; USA; Keiji Kuroda; Toyama Univ.; Gofuku; Toyama; Japan; Fusakazu Matsushima; Toyama Univ.; Gofuku; Toyama; Japan; Shozo Tsunekawa; Toyama Univ.; Gofuku; Toyama; Japan; Kojiro Takagi; Toyama Univ.; Gofuku; Toyama; Japan.;
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中图分类无线电电子学、电信技术;
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专利

1. Characteristics of metal-insulator-metal diodes as generators of far-infrared radiation [J] . Odashima H., Yamamoto K. IEEE Journal of Quantum Electronics . 1996,第2期

机译：作为远红外辐射发生器的金属-绝缘体-金属二极管的特性
2. Controllable far-infrared electromagnetic radiation from plasmas applied by dc or ac bias electric fields [J] . Wei-Min Wang, Zheng-Ming Sheng, X.-G. Dong, Journal of Applied Physics . 2010,第2期

机译：直流或交流偏置电场施加的等离子体可控的远红外电磁辐射
3. Field-angle and DC-bias dependence of spin-torque diode in giant magnetoresistive microstripe [J] . X. Li, Y. Zhou, C. Zheng, Applied Physics Letters . 2016,第19期

机译：巨磁阻微条带中自旋转矩二极管的场角和直流偏置依赖性
4. DC bias dependence of metal-insulator-metal diodes as generators of far-infrared radiation [C] . Hitoshi Odashima, Keiji Kuroda, Fusakazu Matsushima, International Conference on Millimeter and Submillimeter Waves and Applications . 1996

机译：金属绝缘体 - 金属二极管的直流偏置依赖性作为远红外辐射的发电机
5. DC and RF Characterization of High Frequency ALD Enhanced Nanostructured Metal-Insulator-Metal Diodes. [D] . Ajayi, Olawale Adebimpe. 2014

机译：高频ALD增强型纳米结构金属-绝缘体-金属二极管的DC和RF表征。
6. Reversible Shift from Excitonic to Excimer Emissionin Fluorescent Organic Light-Emitting Diodes: Dependence on DepositionParameters and Electrical Bias [O] . Anjaly Soman, Anjali K. Sajeev, Kavya Rajeev, 2020

机译：从激子发射到激子发射的可逆转变荧光有机发光二极管中的发光：取决于沉积参数和电气偏差
7. Fabrication of Metal-Insulator-Metal Point Contact Diode as a Harmonic Generator and a Mixer [O] . Tomizo KUROSAWA, Keiichi TANAKA, Toshio SAKURAI 1981

机译：金属绝缘体 - 金属点接触二极管的制造作为谐波发生器和混合器
8. High Bias Studies on Metal-Insulator-Metal and Metal-Insulator-Semiconductor Tunnel Junctions [R] . Depp, S. W. 1972

机译：金属 - 绝缘体 - 金属和金属 - 绝缘体 - 半导体隧道结的高偏压研究

DC bias dependence of metal-insulator-metal diodes as generators of far-infrared radiation

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