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GHz modulators in the midinfrared using ultrahigh-confinement waveguides

机译:使用超高约束波导的中红外GHz调制器

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Abstract: A high speed modulator at low voltage is created in the mid-infrared at 10 $mu@m wavelengths by using field-induced absorption on otherwise forbidden intersubband transitions. The physical effects could scale to 1.5 $mu@m wavelength light. This modulator is packaged into a unique 350 $mu@m long ultra high confinement (UHC) waveguide for low capacitance and high speed. The modulator quantum wells are at the interface of a 2.1 $mu@m thick by 3.75 $mu@m wide UHC Ge waveguide and the GaAs substrate. The quantum wells have a 17% power coupling to the evanescent fields of the Ge waveguide. A connector to the UHC waveguides, with dimensions much smaller than a free space wavelength, has been developed and demonstrated using diffractive optical element arrays on the back side of the substrate and non-uniform grating couplers. Fields are applied across the modulator quantum wells via an ohmic contact to the side of the Ge waveguide on the top of the QWs. The ground is on the other side of the waveguide and lower towards the substrate. The 7 $mu@m wide mesa supporting the quantum wells on the bottom of the Ge waveguide is slightly wider to accommodate a gold electrode.!10
机译:摘要:通过在其他禁止的子带间跃迁上使用场感应吸收,在10μm波长的中红外创建了一个低电压的高速调制器。物理效应可以扩展到1.5μm波长的光。该调制器被封装在一个独特的长350 µm @ m的超高约束(UHC)波导中,以实现低电容和高速。调制器量子阱位于厚度为2.1μm×3.75μm的UHC Ge波导与GaAs衬底的界面处。量子阱的功率耦合到Ge波导的渐逝场的功率为17%。已经开发并证明了UHC波导的连接器,其尺寸比自由空间波长小得多,该连接器使用基板背面的衍射光学元件阵列和非均匀光栅耦合器进行了演示。场通过欧姆接触跨调制器量子阱施加到QW顶部的Ge波导一侧。地面在波导的另一侧,朝着基板降低。支撑Ge波导底部量子阱的7微米宽的台面稍宽一些,可容纳金电极。!10

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