High speed, monolithically integrated pin-HEMT photoreceiver fabricated on InP with a tunable bandwidth up to 22 GHz using a novel circuit design

摘要

High speed monolithically integrated photoreceivers were fabricated showing flat photo response and a state of the art bandwidth of 18 GHz, which should be sufficient for data transmission systems well beyond 20 Gbit/s. The circuitry consists of a high input impedance front-end design followed by an equalizing second stage to compensate the input capacitance. A state of the art input noise current of 12 pA//spl radic/Hz within the bandwidth was obtained. The bandwidth of the photoreceiver can be tuned with the bias voltages. For a 3 dB peak at 15 GHz a total bandwidth of 22 GHz was obtained.