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Effects of relative humidity variation on photoresist processing

机译:相对湿度变化对光刻胶加工的影响

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Abstract: The environmental specifications for submicron photolithographic processes on photocluster tools have traditionally demanded strict setpoint control with very little variation in temperature and humidity. In an effort to reduce support costs, the need for such tight tolerances on relative humidity is being examined. This paper discusses the effects of relative- humidity variation on photoresist thickness after spin-coating and on the final printed-image linewidth after full processing through the photocluster. Two different photoresists are compared using spray- and puddle-develop processing. When the resist thickness is varied by changing the humidity setpoint, the swing-curve correlation between printed-image linewidth and resist thickness is equivalent to one typically generated by changing the photoresist thickness with different casting speeds. !5
机译:摘要:传统上,在光簇工具上使用亚微米光刻工艺的环境规范要求严格的设定点控制,并且温度和湿度的变化很小。为了减少支持成本,正在研究对相对湿度的这种严格公差的需求。本文讨论了相对湿度变化对旋涂后光致抗蚀剂厚度的影响,以及对经过光团簇进行全面处理后最终印刷图像线宽的影响。使用喷涂和水坑显影工艺比较了两种不同的光刻胶。当通过改变湿度设定点来改变抗蚀剂厚度时,印刷图像线宽和抗蚀剂厚度之间的摆动曲线相关性等同于通常通过以不同的浇铸速度改变抗蚀剂厚度而产生的摆动曲线相关性。 !5

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