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Silicon CMOS optical receiver circuits with integrated thin-film compound semiconductor detectors

机译:具有集成薄膜化合物半导体检测器的硅CMOS光接收器电路

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Abstract: While many circuit designers have tackled the problem of CMOS digital communications receiver design, few have considered the problem of circuitry suitable for an all CMOS digital IC fabrication process. Faced with a high speed receiver design the circuit designer will soon conclude that a high speed analog-oriented fabrication process provides superior performance advantages to a digital CMOS process. However, for applications where there are overwhelming reasons to integrate the receivers on the same IC as large amounts of conventional digital circuitry, the low yield and high cost of the exotic analog-oriented fabrication is no longer an option. The issues that result from a requirement to use a digital CMOS IC process cut across all aspects of receiver design, and result in significant differences in circuit design philosophy and topology. Digital ICs are primarily designed to yield small, fast CMOS devices for digital logic gates, thus no effort is put into providing accurate or high speed resistances, or capacitors. This lack of any reliable resistance or capacitance has a significant impact on receiver design. Since resistance optimization is not a prerogative of the digital IC process engineer, the wisest option is thus to not use these elements, opting instead for active circuitry to replace the functions normally ascribed to resistance and capacitance. Depending on the application receiver noise may be a dominant design constraint. The noise performance of CMOS amplifiers is different than bipolar or GaAs MESFET circuits, shot noise is generally insignificant when compared to channel thermal noise. As a result the optimal input stage topology is significantly different for the different technologies. It is found that, at speeds of operation approaching the limits of the digital CMOS process, open loop designs have noise-power-gain-bandwidth tradeoff performance superior to feedback designs. Furthermore, the lack of good resisters and capacitors complicates the use of feedback circuits. Thus feedback is generally not used in the front-end of our digital process CMOS receivers. !14
机译:摘要:尽管许多电路设计人员已经解决了CMOS数字通信接收器设计的问题,但很少有人考虑适合于所有CMOS数字IC制造工艺的电路问题。面对高速接收器设计,电路设计人员将很快得出结论,高速面向模拟的制造工艺提供了优于数字CMOS工艺的性能优势。然而,对于出于绝大多数原因将接收器与大量常规数字电路集成在同一IC上的应用而言,不再需要低产量和高成本的奇异的面向模拟的制造方法。由于要求使用数字CMOS IC工艺而产生的问题涉及接收机设计的各个方面,并导致电路设计原理和拓扑结构发生重大差异。数字IC主要设计用于生产用于数字逻辑门的小型,快速CMOS器件,因此不花任何精力提供准确或高速的电阻或电容器。缺少可靠的电阻或电容会对接收机设计产生重大影响。由于电阻优化并不是数字IC工艺工程师的特权,因此,最明智的选择是不使用这些元件,而是选择有源电路来代替通常归因于电阻和电容的功能。取决于应用,接收机噪声可能是主要的设计约束。 CMOS放大器的噪声性能不同于双极或GaAs MESFET电路,散粒噪声与通道热噪声相比通常很小。结果,不同技术的最佳输入级拓扑显着不同。已经发现,在接近数字CMOS工艺极限的工作速度下,开环设计具有优于反馈设计的噪声-功率-增益-带宽折衷性能。此外,缺少良好的电阻器和电容器会使反馈电路的使用复杂化。因此,我们的数字处理CMOS接收器的前端通常不使用反馈。 !14

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