首页> 外文会议>International Conference on Excitonic Processes in Condensed Matter >Calculation of electron-exciton scattering cross sections in semiconducting quantum wells
【24h】

Calculation of electron-exciton scattering cross sections in semiconducting quantum wells

机译:半导体量子阱中电子-激子散射截面的计算

获取原文

摘要

Abstract: We have theoretically investigated the scattering of excitons by free electrons in a semiconducting quantum well of finite width. The elastic and ionization scattering cross sections have been calculated as a function of the well width using the Born approximation for scattering of excitons by electrons. The behavior of the scattering cross section as a function of energy of relative motion of the electron and the exciton is similar to that previously obtained from 2D calculations for narrow wells. The cross section increases as the well width increases and the relative wave vector of the electron at which the total cross section is a maximum shift to lower values as the well width increases.!10
机译:摘要:我们在理论上研究了有限宽度的半导体量子阱中自由电子对激子的散射。弹性和电离散射截面已使用阱对电子进行激子散射的伯恩近似值计算为阱宽度的函数。散射截面的行为与电子和激子的相对运动能量的函数相似,与先前从2D计算中获得的窄阱相似。横截面随着阱宽度的增加而增加,总横截面最大的电子的相对波矢随着阱宽度的增加而向更低的值移动!10

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号