Simultaneous thickness and compositional uniformity in selective MOVPE growth

摘要

We investigated the feasibility of thickness and compositional uniformity in selective MOVPE growth. Using a modified mask pattern with an additional open window in the rectangular mask area, we succeeded in making uniform the thickness distributions of InGaAs epilayers selectively grown in the striped area. From photoluminescence studies, we found that thickness and group III composition were uniform in the same region. Consequently an InP/InGaAs MQW structure exhibited a uniform PL peak wavelength in the striped area. This simultaneous uniformity suggests that the phenomena in the masked area dominate the compositional modulation of InGaAs in selective MOVPE growth.