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THE STUDY OF LIGHT DOPED CHROMIUM SI-GaAs SINGLE CRYSTAL IN THE LEC TECHNOLOGY

机译:LEC技术中轻掺杂铬Si-GaAs单晶的研究

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摘要

In this paper, a special technique through the light doped or super-light doped (LDC or SLDC) chromium was reported by LEC system. It was able to obtain repeatedly SI-GaAs crystal of the high resistivity and the mobility. To make inhomogeneities of the resistivity decreases to 10% and to explore for the machine-made of the compensation of the LDC or SLDC.
机译:在本文中,LEC系统报告了一种通过轻掺杂或超轻掺杂(LDC或SLDC)铬的特殊技术。能够反复获得高电阻率和迁移率的SI-GaAs晶体。为了使电阻率的不均匀性降低到10%,并探索对LDC或SLDC进行补偿的机制。

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