5 GHz sampling oscilloscope front-end based on heterojunction bipolar transistors (HBT)

机译：基于异质结双极晶体管（HBT）的5 GHz采样示波器前端

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Three HBT monolithic microwave integrated circuit (MMIC) designs from the basis of a complete digital oscilloscope front-end which has been designed, fabricated and tested. Theses devices are integrated into a thick-film hybrid which is currently being used as the front-end for a digital sampling oscilloscope (DSO). The three devices are based on a closed loop differential amplifier with a gain of 10 dB and a bandwidth greater than 6 GHz.

机译：在完整的数字示波器前端的基础上，进行了三种HBT单片微波集成电路（MMIC）设计，该前端已经过设计，制造和测试。这些设备被集成到厚膜混合器中，该混合器目前被用作数字采样示波器（DSO）的前端。这三个器件基于闭环差分放大器，增益为10 dB，带宽大于6 GHz。

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《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual》|1993年|P.155-158|共4页
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Naboicheck; S.; Ems; S.;
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中图分类无线电电子学、电信技术;
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机译：IN0.49GA0.51P / GAAS异质结双极晶体管（HBT）在200 mm SI基板上：基础厚度，基础和子收集器掺杂浓度的影响
2. Comparative study of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different base surface treatments [J] . Tzu-Pin Chen, Chi-Jhung Lee, Li-Yang Chen, Superlattices and microstructures . 2009,第4期

机译：不同基础表面处理的InGaP / GaAs异质结双极晶体管（HBT）的比较研究
3. On The Breakdown Behaviors Of Inp/ingaas Based Heterojunction Bipolar Transistors (hbts) [J] . Tzu-Pin Chen, Chi-Jhung Lee, Wen-Shiung Lour, Solid-State Electronics . 2009,第2期

机译：基于Inp / ingaas的异质结双极晶体管（hbts）的击穿行为
4. 5 GHz sampling oscilloscope front-end based on heterojunction bipolar transistors (HBT) [C] . Naboicheck S., Ems S., Institute of Electric and Electronic Engineer Gallium Arsenide Integrated Circuit Symposium . 1993

机译：基于异质结双极晶体管的5 GHz采样示波器前端（HBT）
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. A 24-GHz Front-End Integrated on a Multilayer Cellulose-Based Substrate for Doppler Radar Sensors [O] . Federico Alimenti, Valentina Palazzi, Chiara Mariotti, 2017

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7. Studies on gallium arsenide heterojunction bipolar transistors (HBTs) for microwave power applications [O] . Wah Peng Neo -1

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8. Sb-Based Double Heterojunction Bipolar Transistors (DHBTs) With Fmax > 650GHz for 340GHz Transmitter [R] . Hung, A. 2008

机译：基于sb的双异质结双极晶体管（DHBT），Fmax> 650 GHz，适用于340 GHz发送器

5 GHz sampling oscilloscope front-end based on heterojunction bipolar transistors (HBT)

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