首页> 外文会议>Electronic Components and Technology Conference, 1992. Proceedings., 42nd >Multichip module technology using AlN substrate for 2-Gbit/s high-speed switching module
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Multichip module technology using AlN substrate for 2-Gbit/s high-speed switching module

机译:使用AlN基板的2-Gbit / s高速交换模块的多芯片模块技术

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The authors describe a multichip module (MCM) technology for making broadband digital switching modules. A copper/polyimide thin-film multilayer substrate is developed to achieve high-speed digital transmission. The substrate is formed on an aluminum nitride ceramic (AlN) wafer with good thermal characteristics. The meshed strip-line structure is used to control the characteristic impedance for 50- Omega signal lines, and the thin-film termination resistors are made of NiCr to prevent reflections. With this technology, the authors experimentally fabricated a broadband digital switching module, which is constructed from switching ICs in bare dies, clock distributing ICs in flat lead packages, and chip/micro-chip capacitors. In this module, differential digital transmission lines are adopted for high-speed signals to reduce the crosstalk noise effect. Heat generated from the module, which has a total of 25 W of power dissipation, is efficiently conducted through the AlN wafer. This module can operate many 2-Gbit/s high-speed channels. A novel multichip module technology for high-performance systems was successfully developed.
机译:作者介绍了一种用于制造宽带数字交换模块的多芯片模块(MCM)技术。开发铜/聚酰亚胺薄膜多层基板以实现高速数字传输。基板形成在具有良好热特性的氮化铝陶瓷(AlN)晶片上。网状带状线结构用于控制50Ω信号线的特性阻抗,薄膜终端电阻器由NiCr制成,可防止反射。利用这项技术,作者实验性地制造了宽带数字开关模块,该模块由裸芯片中的开关IC,扁平引线封装中的时钟分配IC和芯片/微芯片电容器构成。在该模块中,高速信号采用差分数字传输线,以减少串扰噪声影响。通过模块产生的热量(总共具有25 W的功耗)被有效地传导通过AlN晶圆。该模块可以运行许多2 Gbit / s高速通道。成功开发了用于高性能系统的新型多芯片模块技术。

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