Stark effect and Wannier-Stark localization in InGaAs quantum wells

摘要

Electron states in quantum wells respond sensitively to moderate electric fields either by the quantum confined Stark effect in the case of wide barriers or by Wannier-Stark localization in the case of a superlattice. Both effects lead to large changes of the optical properties near the absorption edge which are useful for intensity modulation and optical switching. Electroabsorption measurements were used to investigate the field-induced changes of the optical properties. Small field modulation yields insight into the underlying changes of the electronic states while large field modulation shows the promises of both effects for applications.