A two-step liquid phase epitaxial growth process for high open circuit voltage thin film InP solar cells

摘要

The authors present a two-step liquid phase epitaxial growth procedure which is designed to yield the highest possible open-circuit-voltage InP solar cell. The design of the solar cell includes an internal oxide layer which limits the high saturation current density contact area. The solar cell design manipulates the properties of InP and that of a p-n junction, and results in an open circuit voltage of 0.970 V. The fabrication of the solar cell design is not specific to solar cells, but is directly applicable to other thin film InP devices as well. The fabrication procedure and device results are presented.