High quality pseudomorphic InAs/InP quantum wells grown by molecular beam epitaxy

摘要

The growth of InAs/InP strained quantum well structures with well thicknesses of 5 to 70 AA by solid source molecular beam epitaxy (MBE) is discussed. Photoluminescence has been observed from these structures over the wavelength range 1.0 to approximately=2.1 mu m, at 10 K. Multiquantum-well p-i-n diodes are characterized for optoelectronic applications from 1.0 to 2.0 mu m. Preliminary studies of InAs-channel MODFET devices are presented.