Current-controlled liquid phase epitaxy of InAsP on InP substrates

机译：InP衬底上InAsP的电流控制液相外延

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The effects of the current flow from the substrate to the melt in conventional liquid-phase-epitaxial (LPE) growth of InAsP on

机译：在传统的InAsP液相外延（LPE）生长中，电流从基板流向熔体的影响

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《Indium Phosphide and Related Materials, 1991., Third International Conference.》|1991年|P.488-491|共4页
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Inubushi K.; Sakai S.; Hyakudai T.; Shintani Y.;
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中图分类无线电电子学、电信技术;
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1. Selective epitaxy of InP on Si(100) substrates prepared by liquid-phase epitaxy [J] . Sugai M, Kochiya T, Oyama Y, The journal of physics and chemistry of solids . 2008,第2a3期

机译：液相外延制备的Si（100）衬底上InP的选择性外延
2. Zn Doping of InP, InAsP/InP, and InAsP/InGaAs Heterostructures Through Metalorganic Vapor Phase Diffusion (MOVPD) [J] . K. Vanhollebeke, M. Dhondt, I. Moerman, Journal of Electronic Materials . 2001,第8期

机译：通过金属有机气相扩散（MOVPD）对InP，InAsP / InP和InAsP / InGaAs异质结构进行锌掺杂
3. FORMATION OF INGAAS LAYERS ONTO INP SUBSTRATES BY LIQUID-PHASE EPITAXY [J] . Syrbu NN., Cretu RV., Dorogan VV. Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter . 1996,第5a6期

机译：液相外延法在INP基体上形成INGAAS层
4. Current-controlled liquid phase epitaxy of InAsP on InP substrates [C] . Inubushi K., Sakai S., Institute of Electric and Electronic Engineer International Conference: Indium Phosphide and Related Materials . 1991

机译：INP基板上的电流控制液相外延
5. High quality indium arsenide and related alloys grown on gallium phosphide substrates using a novel liquid phase-molecular beam epitaxy technique. [D] . Yulius, Aristo. 2004

机译：使用新型液相-分子束外延技术在磷化镓衬底上生长的高质量砷化铟及相关合金。
6. Deposition of Metal-Organic Frameworks by Liquid-Phase Epitaxy: The Influence of Substrate Functional Group Density on Film Orientation [O] . Jinxuan Liu, Osama Shekhah, Xia Stammer, 2012

机译：液相外延沉积金属有机骨架：衬底官能团密度对薄膜取向的影响
7. Growing epitaxial layers of InP/InGaAsP heterostructures on the profiled InP surfaces by liquid-phase epitaxy [O] . Mikhail G. Vasil’ev, Anton M. Vasil’ev, Alexander D. Izotov, 2021

机译：通过液相外延将InP / IngaASP异质结构的外延层生长在异形的INP表面上
8. Liquid Phase Epitaxy of GaAsSb on InP Substrates. [R] . fonstad,clifton g. 1977

机译：Inp衬底上Gaassb的液相外延。

Current-controlled liquid phase epitaxy of InAsP on InP substrates

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