16-element grown-junction InGaAs/InP PIN photodetector arrays on 2' diameter InP substrates

摘要

The fabrication and performance characteristics of a linear 16-element InGaAs/InP PIN photodetector array suitable for 1.3-1.6 mu m wavelength applications are described. The detector design relies on a grown pn junction for the diode and avoids producing exposed InGaAs junctions, which are difficult to passivate. The array fabrication procedure is fully compatible with future monolithic integration with InP-based electronics. A satisfactory yield of good arrays has been obtained. Optical crosstalk measurements were performed at DC and RF with the array mounted in a grating demultiplexer.