首页> 外文会议>Electronic Manufacturing Technology Symposium, 1989, Proceedings. Japan IEMT Symposium, Sixth IEEE/CHMT International >Effects of substrate thermal expansion coefficient on the physical and electrical properties of thick film resistors
【24h】

Effects of substrate thermal expansion coefficient on the physical and electrical properties of thick film resistors

机译:基板热膨胀系数对厚膜电阻器物理和电性能的影响

获取原文

摘要

The way in which the difference between the thermal expansion coefficient of a thick-film resistor and that of an alumina substrate affects the physical and electrical properties of the resistor was examined. The difference between the thermal expansions produces a compression or a tension in the resistor. Consequently, the electric resistance and temperature coefficient of resistance of the resistor without the substrate are larger than those of the resistor with the substrate. In the case of a specimen of RuO/sub 2/-glass (10:90), the force acting on the resistive film from the substrate is about 1.88*10/sup -1/ N in tension in the temperature range from 75 degrees C to 125 degrees C and about 1.55*10/sup -1/ N in compression for the temperature range from -25 degrees C to -50 degrees C. The higher the resistance and the larger the thermal expansion coefficient of glass, the larger are the resistance changes.
机译:研究了厚膜电阻器的热膨胀系数与氧化铝基板的热膨胀系数之间的差异影响电阻器的物理和电学性质的方式。热膨胀之间的差异会在电阻器中产生压缩或拉力。因此,不具有基板的电阻器的电阻和电阻温度系数大于具有基板的电阻器的电阻和电阻温度系数。对于RuO / sub 2 /玻璃(10:90)的样品,在75度的温度范围内,从基材作用到电阻膜上的力约为1.88 * 10 / sup -1 / N在-25摄氏度至-50摄氏度的温度范围内,压缩温度为摄氏125度至约125摄氏度,约为1.55 * 10 / sup -1 /N。电阻越高,玻璃的热膨胀系数越大,则玻璃越大阻力发生变化。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号