Plasma development of SR irradiated plasma polymerized resists

摘要

Synchrotron radiation (SR) vacuum lithography was carried out using plasma chemical processes. Plasma-polymerized and -copolymerized polymethyl methacrylate (PMMA) resists were irradiated by SR directly, and the film thickness was reduced due to the random decomposition of the polymer. Self-development was enhanced by incorporation of Sn, S, F and I as sensitizers into plasma-polymerized while it was restrained by incorporation of styrene. The thickness reduction was completely saturated at a high dose for all plasma-polymerized resists. Oxygen plasma etching enhanced the positive tone pattern on the resist following SR irradiation doses below the saturation level. Surface treatment of plasma-polymerized FBM using W(CO)/sub 6/ as a monomer gas was also found to enhance differential thickness.