Films produced by plasma deposition of a mixture of tetramethylsilane (TMS) and ammonia (NH/sub 3/) at different substrate temperatures were studied. The intent was to produce films comprising organo-silicon polymers with inorganic-type silicon nitride. Measurements of the rate of deposition, composition, structure and electrical properties (over a wide range of frequency) of films deposited at various temperatures are reported and discussed. Parameters such as flow rates, RF power, and position of the substrate were held constant. An attempt is made to correlate the electrical properties with the composition.
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机译：研究了通过在不同基板温度下等离子体沉积四甲基硅烷（TMS）和氨（NH / sub 3 /）的混合物制备的薄膜。目的是生产包含有机硅聚合物和无机型氮化硅的薄膜。报告并讨论了在各种温度下沉积的薄膜的沉积速率，组成，结构和电性能（在很宽的频率范围内）的测量结果。诸如流速，RF功率和基板位置之类的参数保持恒定。试图使电性能与组成相关。
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