Electrical properties of mim and mis structures with Langmuir-Blodgett poly diacetylene films

摘要

Electrical properties are investigated for metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) structures with Langmuir-Blodgett poly diacetylene (LB PDA) insulators. Capacitance-voltage (C-V) characteristics are measured for the Al / LB PDA / p-Si (MIS) devices. The C-V curves show hysteresis, and flat-band voltage shifts are observed under the application of bias voltages. These results show charge injection from Si into the MIS devices. Thermally stimulated currents (TSCs) are measured for Al / LB PDA / Al (MIM) structures. TSC peaks caused by dipole polarization and charge injection are observed in the low and in the high temperature regions, re spectively.Furthermore, remarkable change of TSC curves is observed for this structures between before and after annealing.