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Electronic and vibrational properties of 2D materials from monolayer to bulk

机译:从单层到散装的2D材料的电子和振动性能

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The placement of two dimensional (2D) materials such as hexagonal boron nitride (h-BN) and transition metal dichalcogenide (TMDC) at the forefront of materials and device research was pioneered by the discovery of graphene, an atomically thin 2D allotrope of carbon obtained through mechanical exfoliation. These 2D materials possess a wide range of electronic behaviors from insulator to metallic, resulting from their in-plane strong covalent bonds and their weaker out-of-plane coupling. The intrinsic bandgap of the semiconducting TMDCs makes them materials of choice for next-generation low-dimensional optical and electronic devices for defense and civilian applications. These 2D van der Waal (vdW) materials hold promise for a range of electronic, thermoelectric and optoelectronic devices such as field effect transistor (FET), light emitting device (LED), energy harvesting devices and ultrafast optical devices.
机译:通过发现石墨烯的最前沿,将二维(2D)诸如六边形氮化硼(H-BN)和过渡金属二甲基甲胺(TMDC)的放置在材料和器件研究的前沿进行了促进,得到了石墨烯的原子薄2D碳的原子薄2D型异数通过机械剥离。这些2D材料具有从绝缘体到金属的各种电子行为,由其面内强的共价键和它们较弱的平面外耦合产生。半导体TMDCS的内在带隙使它们成为用于防御和民用应用的下一代低维光学和电子设备的首选材料。这些2D范德瓦尔(VDW)材料保持了一系列电子,热电和光电器件,例如场效应晶体管(FET),发光器件(LED),能量收集装置和超快光学装置。

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