A Discontinuous Galerkin Solver for Full-Band Boltzmann-Poisson Models

摘要

We present new preliminary results of a discontinuous Galerkin (DG) scheme applied to deterministic computations of the transients for the Boltzmann-Poisson (BP) system describing electron transport in semiconductor devices. Very recently in [1], [2], [3], results for one and two dimensional devices were obtained in the case of silicon semiconductor assuming the non-parabolic band approximation. Here, more general band structures are considered. Preliminary benchmark numerical tests on Kane and Brunetti et al. band models are reported.