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Electromigration in 2 μm Redistribution Lines and Cu-Cu Bonds with Highly - oriented Nanotwinned Cu

机译:高取向纳米孪晶Cu在2μm重分布线和Cu-Cu键中的电迁移。

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In this paper, we adopted highly <111>-oriented nanotwinned Cu (nt-Cu) to fabricate 2-μm-wide redistribution lines (RDLs) capped with polyimide and 30-um Cu-Cu direct bonds, and then measured their electromigration (EM) lifetimes. The results show that the nt-Cu RDLs possessed a higher EM lifetime than regular Cu RDL lines. Serious oxidation was observed in the Cu lines after the EM tests. For the EM in Cu-Cu bonds, the resistance Cu-Cu bumps increased less than 5% after 1000 h under 2×105 A/cm2 at 150°C.
机译:在本文中,我们采用高度<111>取向的纳米孪晶Cu(nt-Cu)制备了2μm宽的由聚酰亚胺和30um Cu-Cu直接键覆盖的重分布线(RDL),然后测量了它们的电迁移( EM)寿命。结果表明,nt-Cu RDLs比常规的Cu RDL谱线具有更高的EM寿命。 EM测试后,在铜线中观察到严重的氧化。对于Cu-Cu键中的EM,在2×10下1000小时后,Cu-Cu凸点的电阻增加不到5% 5 A /厘米 2 在150°C下。

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