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InFO_SoW (System-on-Wafer) for High Performance Computing

机译:InFO_SoW(晶片上系统),用于高性能计算

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A novel wafer-scale system integration solution, InFO_SoW (System-on-Wafer), has been successfully developed to integrate known-good chips arrays with power and thermal module for high performance computing. InFO_SoW eliminates the use of substrate and PCB by serving as the carrier itself. Close packed multiple chips arrays within a compact system enable the solution to reap the wafer-scale benefits such as low latency chip-to-chip communication, high bandwidth density and low PDN impedance for greater computing performance and power efficiency. In addition to heterogeneous chips integration, its wafer-field processing capability has enabled chiplet-based design for greater cost saving and design flexibility.This paper demonstrated the industry’s first wafer-scale system integration package with InFO technology. Electrical characterization results revealed good process uniformity across the super large package of InFO_SoW. It is simulated to have about 15 % power saving of the interconnects with length of 30 mm due to lower surface roughness of InFO RDL. Thermal management of such high power in a compact system has been validated through scalable proof-of-concept (POC) thermal solution. The POC thermal solution proved its capability of dissipating 7000 W out of the 2-by-5 array dummy heater, whereby the maximal temperature of the dummy heater is kept below 90°C. In addition, InFO_SoW structural robustness has been verified through both InFO wafer-level quick torture and system-level reliability tests. Despite its super large package size, thermomechanical Chip-Package-Interaction (CPI) simulation study revealed that InFO_SoW has relatively low risk when compared to qualified Flip-Chip package with advanced Si-node.
机译:已经成功开发了一种新颖的晶圆级系统集成解决方案InFO_SoW(晶圆上系统),以将已知良好的芯片阵列与功率和散热模块集成在一起,以进行高性能计算。 InFO_SoW本身用作载体,从而消除了对基板和PCB的使用。紧凑型系统中的密排多个芯片阵列使该解决方案能够获得晶片级的优势,例如低等待时间的芯片到芯片通信,高带宽密度和低PDN阻抗,从而提高了计算性能和能效。除了异构芯片集成之外,其晶片现场处理能力还支持基于小芯片的设计,从而节省了更多成本,并提高了设计灵活性。本文展示了业界首款采用InFO技术的晶片级系统集成封装。电学表征结果表明,在整个InFO_SoW超大封装中,工艺均一性良好。据模拟,由于InFO RDL的较低的表面粗糙度,在长度为30 mm的情况下,互连可以节省约15%的功率。通过可扩展的概念验证(POC)散热解决方案,已经验证了紧凑型系统中如此高功率的散热管理。 POC散热解决方案证明了其能够从2 x 5阵列虚拟加热器中散发7000 W的热量,从而使虚拟加热器的最高温度保持在90°C以下。此外,InFO_SoW的结构坚固性已通过InFO晶圆级快速折磨和系统级可靠性测试进行了验证。尽管其超大封装尺寸,但热机械芯片封装相互作用(CPI)仿真研究表明,与具有先进硅节点的合格倒装芯片封装相比,InFO_SoW的风险相对较低。

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