In-line Photoresist Defect Reduction through Failure Mode and Root-Cause Analysis:Topics/categories: EO (Equipment Optimization)/ DR (Defect Reduction)

摘要

This paper describes a data driven method to investigate in-line defect elevations, analyze root causes and thereafter, implement systematic improvements in manufacturing process and equipment. The problem described is an elevated random defect, observed post-patterning, and traced to incoming particulates in photoresist and/or spin-on dielectrics. The detailed analysis of inspection and defect metrology data leads to systematic diagnosis and improvement in the point-of-use photoresist filtration along with minimal downtime of the photoresist line. The methodology described is a good reference method for fab lines, when faced with similar ’special-cause’ defect problems that originate from incoming wet chemicals.