Si-IGBT / SiC-MOSFET Hybrid Inverter Control Method for Reduced Loss and Switching Ripple

摘要

In this paper, a hybrid two-level voltage source inverter which utilizes a Si-IGBT as the high-side switch and a SiC-MOSFET as the low-side switch is suggested. Due to its uneven switch characteristics, proper discontinuous pulse width modulation (DPWM) method is applied to reduce losses generated in the inverter effectively. In addition, variable switching frequency control method is proposed to reduce the switching ripple with the cost of low increase of losses. The suggested hybrid inverter is compared to the full Si-IGBT and full SiC-MOSFET inverters in the perspective of losses and ripples.