Analysis and Design of X-Band LNA Using Parallel Technique

摘要

In this paper, a new method based on parallel amplifier design technique for low noise amplifiers (LNA) is investigated in order to improve the linearity and noise figure (NF). Considering two inductively degenerated common source (IDCS) topology as parallel networks, the minimum noise figure ($NF_{min}$) and optimum noise impedance ($Z_{sopt}$) and $R_{n}$ (equivalent noise resistance) are calculated. Simulation result for the designed 8-11 GHz LNA with the $.1-mu mathrm{m}$ pseudomorphic GaAs HEMT model is reported to support proposed theories.