A 1.0 to 6.7GHz Two Stage Wideband LNA Using Source Follower Feedback in CMOS Technology

摘要

A two-stage wideband low-noise amplifier (LNA) using source-follower feedback (SFF) is presented. A novel approach using a combination of asymmetrical inductive peaking and SFF is used to alleviate the trade-off between input matching and noise figure, thus making more space for design. A peaking inductor in the gate of the NMOS in the first stage is added to resonate with the capacitance of the node, resulting better input matching. In addition, a second stage is added to widen gain bandwidth using inductive load. Simulated in TSMC $mathbf{0.18}-mumathbf{m}$ CMOS technology for 1-6.7 GHz, voltage gain of 12.5 dB and a NF of 2.2dB over the 3-dB bandwidth is achieved. The LNA consumes 9.3 mW from a 1.8 V supply.