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Performance Improvement for Plug-In Reverse Conducting IGBTs through Gate-Voltage Observation

机译:通过栅极电压观察提高插入式反向导通IGBT的性能

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摘要

While driving a plug-in RC-IGBT, the performance outcome can be significantly improved by adapting the turn-OFF process. Hereby, the observation of the characteristic gate-voltage behavior allows the distinction between IGBT and diode turn-OFF. Latter can be easily manipulated in order to utilize the full potential of the inverter locking time.
机译:在驱动插入式RC-IGBT时,通过调整关断过程可以显着改善性能结果。因此,通过观察栅极特性曲线可以区分IGBT和二极管关断。为了充分利用逆变器锁定时间的全部潜能,可以轻松地进行后期操作。

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