Process and Device Simulation of Schottky Barrier MOSFETs for Analysis of Current Injection

摘要

In this paper we focus on the implementation of a process flow of SB-MOSFETs into the process simulator of the Synopsys TCAD Sentaurus tool-chain. The improved structure containing topography is briefly discussed and further device simulations are applied with the latest physical models available for these type of devices. Afterwards, some key parameters are discussed and finally the results are compared with fabricated SB-MOSFETs in terms of accuracy and capability of process simulations.