Molybdenum-copper Alloys as a Base Material for Microfabrication Planar Slow-wave Structures of Millimeter-band Vacuum Electron Devices

摘要

Development of millimeter and submillimeter-band (THz-band) vacuum electronic devices put forward special requirements to the properties of structural materials for microfabrication of such basic electronic components as slow-wave structures. One of the promising composite materials for vacuum microelectronic devices is molybdenum-copper alloys. This composite combines high thermal and electrical conductivity of copper and low thermal expansion of molybdenum. The influence of the composition of molybdenum-copper alloy on the electrodynamics parameters (S-parameters) of the slow-wave structure was revealed with the help of numerical simulation. Two sources magnetron co-sputtering can be utilized for Mo-Cu alloys deposition with the resulting composition of the alloy controlled by varying the power of the magnetron sources, working gas pressure and the substrate temperature.