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Gamma Irradiation Effect Studies on Monolayer CVD Grown Graphene on Metallic Substrates

机译:金属基底上单层CVD生长石墨烯的γ辐射效应研究

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Graphene is a two-dimensional material and has demonstrated an exceptional electronic and photonic properties for unlimited applications including its use in extreme environments of the space. There are several known techniques of formation of graphene onto different types of substrates such as the substrate transfer process and direct deposition. In this work, we deposited monolayer graphene over copper and nickel substrates in NanoCVD-8G Graphene reactor using argon plasma, and methane as a carbon source and studied effects of gamma irradiation using Cobalt-60 source. Radiation effects on crystalline structure of graphene is examined using Raman Spectroscopy and X-ray Photo Electron Spectroscopy (XPS). In our experiment, we used irradiation dose from 1 kGy to 2.65 kGy for different samples of graphene over copper and nickel substrates. For the graphene grown on the nickel substrates, we exposed the irradiation dose of 1.0 kGy and 2.5 kGy on two samples, respectively. For the graphene grown on the copper substrates, we exposed 1.25 kGy, 1.75 kGy, and 2.65 kGy irradiation dose on three samples, respectively. We observed D-peak in graphene deposited over nickel and copper substrates caused by disordered structure of graphene after Co-60 exposure. After the Raman spectroscopy and XPS studies, same amount of irradiation was used for second set of irradiation dose experiment. XPS data on Co-60 exposed samples showed four peaks positioned at 284.8eV, 285.3eV, 286.0 eV and 288.5 eV for C-C, C-OH, C-O-C and COOH bonds, respectively. Analysis of the results shows weakening of C-C bonds and formation of C-OH, C-O-C and COOH bonds implying reduced electrical conductivity of graphene.
机译:石墨烯是一种二维材料,并已显示出卓越的电子和光子特性,可用于无限的应用,包括在空间的极端环境中使用。有几种已知的在不同类型的基底上形成石墨烯的技术,例如基底转移工艺和直接沉积。在这项工作中,我们使用氩气等离子体和甲烷作为碳源,在NanoCVD-8G石墨烯反应器中的铜和镍衬底上沉积了单层石墨烯,并研究了使用Cobalt-60源进行伽马辐射的效果。使用拉曼光谱和X射线光电子能谱(XPS)检查了辐射对石墨烯晶体结构的影响。在我们的实验中,我们对铜和镍基板上的不同石墨烯样品使用了1 kGy至2.65 kGy的辐照剂量。对于在镍基板上生长的石墨烯,我们分别在两个样品上暴露了1.0 kGy和2.5 kGy的辐照剂量。对于在铜基板上生长的石墨烯,我们分别在三个样品上暴露了1.25 kGy,1.75 kGy和2.65 kGy的辐照剂量。我们观察到在Co-60暴露后,石墨烯的无序结构引起的沉积在镍和铜基板上的石墨烯中的D峰。在拉曼光谱和XPS研究之后,将相同量的辐射用于第二组辐射剂量实验。在暴露于Co-60的样品上的XPS数据显示,对于C-C,C-OH,C-O-C和COOH键,四个峰分别位于284.8eV,285.3eV,286.0eV和288.5eV。结果分析表明,C-C键减弱且C-OH,C-O-C和COOH键形成,这意味着石墨烯的电导率降低。

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