首页> 外文会议>International Symposium on Devices, Circuits and Systems >Growth of ZnSnO3 nano-crystalloids on Sisubstrate by employing chemical bath deposition (CBD) technique for self-powered UV-light sensing applications
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Growth of ZnSnO3 nano-crystalloids on Sisubstrate by employing chemical bath deposition (CBD) technique for self-powered UV-light sensing applications

机译:通过化学浴沉积(CBD)技术在自供电紫外光感测应用中在Zn衬底上生长ZnSnO3纳米晶体

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In the current work, UV-light sensing property of poly-crystalline Zinc-Tin-Oxide (ZnSnO3)nano-crystalloids grown by employing double-step chemical bath deposition technique has been investigated. The formation of cubic ZnSnO3 structure on p-Si [100] substrate has been confirmed by FESEM images. Crystallographic orientation and optical properties of such crystalloids are studied by X-ray diffraction, UV-VIS spectrophotometry and ellipsometric measurements. Absorption coefficient of the CBD-grown ZnSnO3 is obtained to be 2.1 × 105/m, at the wavelength region corresponding to its band gap of 3.6 eV. The current-voltage (I-V) characteristic under both dark and illuminated condition reveals the ability of the self-biased heterojunction device to be used as UV-ray photo-detector.
机译:在当前的工作中,聚结晶锌 - 氧化锌(ZnSno)的UV光传感性能(ZnSno 3 )通过采用双步化学浴沉积技术而生长的纳米晶体。立方znsno的形成 3 P-Si [100]衬底的结构已经通过FESEM图像确认。通过X射线衍射,UV-Vis分光光度法和椭圆测量测量来研究这种晶体的晶体取向和光学性质。 CBD-生长的ZnSNO的吸收系数 3 获得为2.1×10 5 / m,在与其带隙的波长区域为3.6eV。暗和照明条件下的电流电压(I-V)特性揭示了自偏置异质结装置用作紫外线照片检测器的能力。

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