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Memristor-Based Logic Gate Circuit

机译:基于忆阻器的逻辑门电路

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摘要

For the characteristics of memristor with memory function in the circuit, Through the PSPICE simulation software, the establishment of the memristor model and the simulation of the logic gate circuit based on the memristor. The NiO memristor was fabricated on the Si substrate by magnetron sputtering method, and a typical V-I hysteresis characteristic curve was obtained. The NiO memristor is connected to the hardware circuit of the logic gate. The actual test results show that it is consistent with the logic truth table as the simulation diagram of the logic gate circuit based on the memristor, which further confirms that the pure memristor circuit is can realize the logic function.
机译:针对电路中具有记忆功能的忆阻器的特性,通过PSPICE仿真软件,建立了忆阻器模型,并基于忆阻器对逻辑门电路进行了仿真。通过磁控溅射法在Si衬底上制备了NiO忆阻器,并获得了典型的V-I磁滞特性曲线。 NiO忆阻器连接到逻辑门的硬件电路。实际测试结果表明,该电路与基于忆阻器的逻辑门电路仿真图与逻辑真值表相吻合,进一步证明了纯忆阻器电路可以实现逻辑功能。

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