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3D Packaging with Embedded High-Power-Density Passives for Integrated Voltage Regulators

机译:具有嵌入式高功率密度无源器件的3D封装,用于集成稳压器

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Highly-integrated 3D voltage regulators (IVRs) for high-power applications are developed for emerging applications such as AI computing and server. With this 3D process integration, passive components such as inductors and capacitors are embedded into substrates and placed close to the chips, resulting in short power delivery networks (PNDs) and high power efficiency. High-density tantalum capacitors are integrated with high-density magnetic-core inductors to realize IVRs with module thickness around 0.7 mm. By incorporating high-permeability magnetic materials as the cores, the inductors achieved 20X improvement in inductance as compared to air-core inductors. The high inductance allows inductors to be designed with less number of windings, resulting in low component resistance of 5 mΩ. The integrated components have package-compatible terminals that are compatible with electrolytic plating process. The terminals allow them to be connected with low-resistance vias to further reduce parasitic losses and improve the power efficiency. Short PDNs and low-resistance interconnections and low-resistance components make the demonstrated IVRs ideal for high-power density computing applications with high efficiency low-impedance power delivery networks.
机译:针对大功率应用的高度集成的3D稳压器(IVR)专为AI计算和服务器等新兴应用而开发。通过这种3D工艺集成,无源组件(例如电感器和电容器)被嵌入到基板中并靠近芯片放置,从而导致了短功率传输网络(PND)和高功率效率。高密度钽电容器与高密度磁芯电感器集成在一起,以实现模块厚度约为0.7 mm的IVR。通过将高磁导率的磁性材料用作磁芯,与空心电感相比,电感的电感提高了20倍。高电感使电感器的绕组数更少,从而降低了5mΩ的低组件电阻。集成组件具有与电镀工艺兼容的封装兼容端子。端子允许它们与低电阻通孔连接,以进一步减少寄生损耗并提高电源效率。短的PDN,低电阻互连和低电阻组件使该IVR成为具有高效低阻抗供电网络的高功率密度计算应用的理想选择。

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