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An All-Digital Temperature Sensor with Process and Voltage Variation Tolerance for IoT Applications

机译:具有过程和电压变化容差的全数字温度传感器,适用于物联网应用

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The embedded temperature sensor which monitors the hot spots of the chip had become an essential circuit for improving the reliability of the system-on-a-chip (SoC). However, most of the temperature sensors cannot resist the influence of voltage variations and results in significant temperature errors. In this paper, the relative reference modeling (RRM)-based temperature sensor is presented. The proposed temperature sensor uses a low-temperature sensitivity voltage classifier and a low-voltage sensitivity proportional to absolute temperature (PTAT) circuit to resist the voltage variations. Addition, the process variations can be eliminated after the three-point calibration. The proposed temperature sensor was fabricated in TSMC 90nm CMOS process. The measured results show that the temperature error of the proposed design is from -1.47°C to 1.40°C with supply voltage 0.9 to 1.1V.
机译:监视芯片热点的嵌入式温度传感器已经成为提高片上系统(SoC)可靠性的必不可少的电路。但是,大多数温度传感器无法抵抗电压变化的影响,并导致明显的温度误差。本文提出了一种基于相对参考模型(RRM)的温度传感器。提出的温度传感器使用低温灵敏度电压分类器和与绝对温度成比例的低压灵敏度(PTAT)电路来抵抗电压变化。此外,三点校准后可以消除工艺变化。所提出的温度传感器是采用台积电90nm CMOS工艺制造的。测量结果表明,在电源电压为0.9至1.1V的情况下,所提出设计的温度误差为-1.47°C至1.40°C。

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